[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Oh et al., 2006 - Google Patents

Wet-etch Characteristics of ZnO Using Acidic Solutions

Oh et al., 2006

View PDF
Document ID
7567657136717084412
Author
Oh J
Lee J
Publication year
Publication venue
Korean Journal of Materials Research

External Links

Snippet

The characteristics of the wet-etching of ZnO thin films were investigated using hydrochloric and phosphoric acid solutions as etchants. The etch rate of ZnO films, using highly diluted hydrochloric acid solutions at a concentration of 0.25% in deionized water, was determined …
Continue reading at koreascience.kr (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies

Similar Documents

Publication Publication Date Title
US11264536B2 (en) Nanowires or nanopyramids grown on a graphene substrate
TWI445073B (en) Method for manufacturing semiconductor substrate, semiconductor substrate for solar cell and etching solution
TW201038780A (en) Sapphire substrate with periodical structure
CN103378237B (en) epitaxial structure
US20130288464A1 (en) Method for making eptaxial structure
CN103378239A (en) Epitaxial structure body
CN103199004A (en) Manufacturing method of III-group nitride nano-structure
US8859402B2 (en) Method for making epitaxial structure
CN103378236A (en) Epitaxy structural body with microstructure
US9105484B2 (en) Epitaxial stucture
Oh et al. Wet-etch Characteristics of ZnO Using Acidic Solutions
CN104465900A (en) Structured arrangement manometer coarsened sapphire substrate and preparation method
KR101588577B1 (en) A fabrication method of vertically aligned GaAs semiconductor nanowire arrays with large area
CN107978662B (en) Preparation method of gallium nitride nanometer hole
Chau et al. The fabrication of macroporous polysilicon by nanosphere lithography
Bae et al. Formation of ZnO nanocones using wet chemical etching of ZnO nanorods in an aqueous solution of HCl
Yasui et al. Preparation of anodic porous alumina mask with ideally arranged holes on InP single crystals
Chao et al. Controlled formation of well-aligned GaAs nanowires with a high aspect ratio on transparent substrates
Qi et al. Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction
Weng et al. Fabrication of the InP nanopillars
Liang et al. Influences of temperature and concentrations on morphology of TMAH anisotropic etching for silicon microchannel plate
Zhang et al. GaN-based LEDs on nano-patterned sapphire substrates
Hsu et al. Study on GaN micro-rod growth by nature patterned sapphire substrate
MICRO Hock M. Ng and Aref Chowdhury Bell Laboratories, Lucent Technologies 600 Mountain Avenue, Murray Hill, NJ 07974, USA E-mail: hmng Qlucent. com
Kim et al. Optical characterizations of GaN nanorods fabricated by natural lithography