[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

VAN DAU, 2007 - Google Patents

The Emergence of Spin Electronics in Data Storage

VAN DAU, 2007

Document ID
7500359158450921290
Author
VAN DAU F
Publication year

External Links

Snippet

The interdependence between magnetization and charge transport is not a new story. For instance, anisotropic magnetoresistance (AMR), which links the value of the resistance to the respective orientation of magnetization and current, was first observed in 1856 by …
Continue reading at books.google.com (other versions)

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/22—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using galvano-magnetic effects, e.g. Hall effects; using similar magnetic field effects
    • H01L27/222—Magnetic non-volatile memory structures, e.g. MRAM
    • H01L27/226—Magnetic non-volatile memory structures, e.g. MRAM comprising multi-terminal components, e.g. transistors
    • H01L27/228—Magnetic non-volatile memory structures, e.g. MRAM comprising multi-terminal components, e.g. transistors of the field-effect transistor type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements using thin films in plane structure using magnetic domain propagation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/08—Magnetic-field-controlled resistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/02—Details

Similar Documents

Publication Publication Date Title
Chappert et al. The emergence of spin electronics in data storage
Guo et al. Spintronics for energy-efficient computing: An overview and outlook
Tudu et al. Recent developments in perpendicular magnetic anisotropy thin films for data storage applications
Bhatti et al. Spintronics based random access memory: a review
Zhu Magnetoresistive random access memory: The path to competitiveness and scalability
US9449668B2 (en) Current induced spin-momentum transfer stack with dual insulating layers
US8760915B2 (en) High speed low power magnetic devices based on current induced spin-momentum transfer
Ikeda et al. Magnetic tunnel junctions for spintronic memories and beyond
Wolf et al. The promise of nanomagnetics and spintronics for future logic and universal memory
KR101649978B1 (en) Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures
US9812184B2 (en) Current induced spin-momentum transfer stack with dual insulating layers
EP2220651B1 (en) High speed low power magnetic devices based on current induced spin-momentum transfer
US7936597B2 (en) Multilevel magnetic storage device
Zabel Progress in spintronics
US7502248B2 (en) Multi-bit magnetic random access memory device
US20100128510A1 (en) Magnetic Data Storage
Parkin Racetrack Memory: a high capacity, high performance, non-volatile spintronic memory
JP2004303801A (en) Magnetic memory and its writing method therein
Wang et al. Spin transfer torque random access memory
Parkin et al. Emerging spintronic memories
VAN DAU The Emergence of Spin Electronics in Data Storage
Bertacco et al. New trends in magnetic memories
Vermeulen et al. Progress in Spin Logic Devices Based on Domain-Wall Motion
Cros et al. The 2007 nobel prize in physics: Albert Fert and Peter Grünberg
Tang et al. Electric control of magnetic devices for spintronic computing