Richards et al., 1995 - Google Patents
MOCVD of high quality YBa2Cu3O7− δ thin films using a fluorinated barium precursorRichards et al., 1995
- Document ID
- 7430982310102832642
- Author
- Richards B
- Cook S
- Pinch D
- Andrews G
- Lengeling G
- Schulte B
- Jürgensen H
- Shen Y
- Vase P
- Freltoft T
- Spee C
- Linden J
- Hitchman M
- Shamlian S
- Brown A
- Publication year
- Publication venue
- Physica C: Superconductivity
External Links
Snippet
MOCVD of superconducting YBa2Cu3O7δ thin films using the novel fluorinated barium β- diketonate complex [Ba (TDFND) 2· tetraglyme] 1 in combination with [Y (TMHD) 3] 2 and [Cu (TMHD) 2] is reported. The Ba complex has a low melting point (72° C), is thermally …
- 238000002488 metal-organic chemical vapour deposition 0 title abstract description 16
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
- H01L21/314—Inorganic layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
- H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
- H01L39/2422—Processes for depositing or forming superconductor layers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed material
- C30B23/02—Epitaxial-layer growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Feenstra et al. | Effect of oxygen pressure on the synthesis of YBa2Cu3O7− x thin films by post‐deposition annealing | |
KR100815000B1 (en) | Oxide films with nanodot flux pinning centers | |
Kester et al. | Phase evolution in boron nitride thin films | |
US6893732B1 (en) | Multi-layer articles and methods of making same | |
US6797313B2 (en) | Superconductor methods and reactors | |
EP1334525B1 (en) | Precursor solutions and methods of using same | |
US6974501B1 (en) | Multi-layer articles and methods of making same | |
MacManus-Driscoll et al. | Studies of structural disorder in ReBa2Cu3O7− x thin films (Re= rare earth) as a function of rare-earth ionic radius and film deposition conditions | |
CA1338202C (en) | Chemical vapor deposition of oxide films containing alkaline earth metals from metal-organic sources | |
US20070042127A1 (en) | Film growth at low pressure mediated by liquid flux and induced by activated oxygen | |
Yoshida et al. | Surface morphology and growth mechanism of YBa2Cu3O7− y films by metalorganic chemical vapor deposition using liquid sources | |
Richards et al. | MOCVD of high quality YBa2Cu3O7− δ thin films using a fluorinated barium precursor | |
JP2007525790A (en) | Superconductor method and reactor | |
US6794339B2 (en) | Synthesis of YBa2CU3O7 using sub-atmospheric processing | |
EP0698932A2 (en) | Process for preparing high crystallinity oxide thin film and film deposition apparatus for the process | |
Dawley et al. | High J c YBa 2 Cu 3 O 7-δ films via rapid, low pO 2 pyrolysis | |
Bazuev et al. | The chemistry of volatile β-diketonates and their application in the synthesis of high-temperature superconducting thin films | |
Zhang et al. | A new route to high‐T c superconducting Bi–Sr–Ca–Cu–O thin films: Improved deposition efficiency and film morphology using ammonia–argon mixtures as the carrier gas | |
Hughes et al. | Reflection high-energy electron diffraction studies of wurtzite GaN grown by molecular beam epitaxy | |
Han et al. | Metalorganic chemical vapor deposition route to epitaxial neodymium gallate thin films | |
US5438037A (en) | Method for depositing another thin film on an oxide thin film having perovskite crystal structure | |
Zama et al. | Preparation and characterization of YBaCuO superconducting films by low-temperature chemical vapor deposition using β-diketonate complex and N2O | |
Hinds et al. | MOCVD Routes to Tl2Ba2Can-1CunO4+ 2nSuperconductor and Dielectric Insulator Thin Films | |
Schmaderer et al. | High-Tc-superconductors prepared by CVD | |
Zhao et al. | Deposition of high-Tc superconducting Y-Ba-Cu-O thin films at low temperatures using a plasma-enhanced organometallic chemical vapor deposition approach |