[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Breckenridge et al., 1954 - Google Patents

Electrical and optical properties of intermetallic compounds. I. Indium antimonide

Breckenridge et al., 1954

Document ID
739472939056304519
Author
Breckenridge R
Blunt R
Hosler W
Frederikse H
Becker J
Oshinsky W
Publication year
Publication venue
Physical Review

External Links

Snippet

The conductivity and Hall coefficient of InSb have been measured over the temperature range 78 K to 750 K. At low temperatures an electron mobility of 30 000 cm 2/volt-sec and a mobility ratio of 29 are observed. The effective mass of electrons is 0. 0 4 m and the width of …
Continue reading at journals.aps.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/02Details
    • H01L39/12Details characterised by the material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479Application of electric currents or fields, e.g. for electroforming

Similar Documents

Publication Publication Date Title
Breckenridge et al. Electrical and optical properties of intermetallic compounds. I. Indium antimonide
Harman et al. Preparation and some physical properties of Bi2Te3, Sb2Te3, and As2Te3
Brebrick Deviations from stoichiometry and electrical properties in SnTe
Segura et al. Investigation of impurity levels in n-type indium selenide by means of Hall effect and deep level transient spectroscopy
Blunt et al. Electrical and optical properties of intermetallic compounds. IV. Magnesium stannide
Hyun et al. Electrical properties of the 85% Bi2Te3-15% Bi2Se3 thermoelectric material doped with SbI3 and CuBr
Harman et al. Band Structure of HgSe and HgSe–HgTe Alloys
Leifer et al. Some properties of p-type gallium antimonide between 15 K and 925 K
Bevolo et al. Molar heat capacity of GeTe, SnTe, and PbTe from 0.9 to 60 K
Aven Mobility of holes and interaction between acceptor defects in ZnTe
Dunlap Jr Properties of Zinc-, Copper-, and Platinum-Doped Germanium
Fochuk et al. Indium dopant behaviour in CdTe single crystals
Toyama et al. Electron Mobility and Impurity Concentration in n-GaP Crystals Grown by Slow Cooling of Ga Solution
Oliveira et al. Purification and growth of PbI/sub 2/crystals: dependence of the radiation response on the PbI/sub 2/crystal purity
Burger et al. Temperature gradient solution zoning growth and characterization of ZnXCd1− XSe single crystals
Miller et al. Interrelation of electronic properties and defect equilibria in PbTe
Welker et al. Group III-group V compounds
Masumoto et al. The preparation and semiconducting properties of single crystals of ZnSnAs2 compound B
Kaplunov et al. The influence of impurity and isotopic composition of single-crystal germanium on optical transmission in the range of 520–1000 cm− 1
Partin Molecular beam epitaxial growth and characterization of lead telluride for laser diodes
Wagner Infrared absorption of interstitial oxygen in silicon at low temperatures
Massimo et al. Pb 1-x Ge x Te solubilities, electrical and optical properties
Qasrawi et al. Crystal Data, Electrical Resistivity, and Hall Mobility of n‐Type AgIn5S8 Single Crystals
Nikolic Optical energy gaps of PbSe-SnTe, PbSe-SnSe, PbTe-SnTe and PbTe-SnSe
Lopez-Rivera et al. Growth and photoconductivity properties of CdIn2Te4 and Cd0. 83In0. 34Te1. 34