Breckenridge et al., 1954 - Google Patents
Electrical and optical properties of intermetallic compounds. I. Indium antimonideBreckenridge et al., 1954
- Document ID
- 739472939056304519
- Author
- Breckenridge R
- Blunt R
- Hosler W
- Frederikse H
- Becker J
- Oshinsky W
- Publication year
- Publication venue
- Physical Review
External Links
Snippet
The conductivity and Hall coefficient of InSb have been measured over the temperature range 78 K to 750 K. At low temperatures an electron mobility of 30 000 cm 2/volt-sec and a mobility ratio of 29 are observed. The effective mass of electrons is 0. 0 4 m and the width of …
- WPYVAWXEWQSOGY-UHFFFAOYSA-N Indium antimonide 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[Sb]#[In] 0 title abstract description 12
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/02—Details
- H01L39/12—Details characterised by the material
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
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