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Yang et al., 2021 - Google Patents

High sensitivity graphene-Al2O3 passivated InGaAs near-infrared photodetector

Yang et al., 2021

Document ID
7272240793674269628
Author
Yang B
Zhao Y
Chen J
Publication year
Publication venue
Nanotechnology

External Links

Snippet

InGaAs/graphene Schottky photodiode has a low Schottky barrier height (SBH) which induces high dark current density. In this paper, an Al 2 O 3 thin film is inserted between the layer of InGaAs and graphene to suppress the dark current density for nearly two orders of …
Continue reading at iopscience.iop.org (other versions)

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    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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