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Gonzalez et al., 2011 - Google Patents

Analysis of the temperature dependence of trap-assisted tunneling in Ge pFET junctions

Gonzalez et al., 2011

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Document ID
7240829624104924831
Author
Gonzalez M
Eneman G
Wang G
De Jaeger B
Simoen E
Claeys C
Publication year
Publication venue
Journal of The Electrochemical Society

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Snippet

In this work, the temperature behavior of trap-assisted tunneling (TAT) in Ge pFET junctions selectively grown in STI substrates is evaluated, whereby the impact of the electric field and the threading dislocation density (TDD) is studied for temperatures ranging from 233 to 418 …
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