Pan et al., 2022 - Google Patents
Efficient defect control of zinc vacancy in undoped ZnO microtubes for optoelectronic applicationsPan et al., 2022
- Document ID
- 716022032853771405
- Author
- Pan Y
- Yan Y
- Wang Q
- Yang L
- Zhang X
- Tang L
- Xing C
- Chen F
- Jiang Y
- Publication year
- Publication venue
- Journal of Applied Physics
External Links
Snippet
Here, we report a strategy to regulate the defect level of zinc vacancy (V Zn) in acceptor-rich ZnO (A-ZnO) microtubes by optical vapor supersaturated precipitation (OVSP) combined with the first-principles calculation. The formation energy (FE) of V Zn in ZnO is calculated …
- 239000011701 zinc 0 title abstract description 137
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Yu et al. | Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing | |
Zhou et al. | Significant enhancement in the thermoelectric performance of aluminum-doped ZnO tuned by pore structure | |
Cheng et al. | Enhanced thermoelectric performance in Cd doped CuInTe2 compounds | |
Grzybowski et al. | Next generation of Ge1− ySny (y= 0.01-0.09) alloys grown on Si (100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission | |
Zhai et al. | Single‐crystalline Sb2Se3 nanowires for high‐performance field emitters and photodetectors | |
Koteeswara Reddy et al. | Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures | |
Wang et al. | Ga-doping-induced carrier tuning and multiphase engineering in n-type PbTe with enhanced thermoelectric performance | |
Liu et al. | The effect of postannealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction | |
Kumar et al. | Raman spectroscopy and in situ XRD probing of the thermal decomposition of Sb2Se3 thin films | |
Zhang et al. | Investigation on the formation mechanism of p-type Li–N dual-doped ZnO | |
Pan et al. | Efficient defect control of zinc vacancy in undoped ZnO microtubes for optoelectronic applications | |
Wang et al. | Free-standing undoped ZnO microtubes with rich and stable shallow acceptors | |
Wang et al. | A review of earth abundant ZnO-based materials for thermoelectric and photovoltaic applications | |
Wu et al. | Structure and photoluminescence study of silicon based two-dimensional Si2Te3 nanostructures | |
Bozheyev et al. | Preparation of highly (001)‐oriented photoactive tungsten diselenide (WSe2) films by an amorphous solid–liquid‐crystalline solid (aSLcS) rapid‐crystallization process | |
Huang et al. | B-doping and annealing on the properties of B and Ga co-doped ZnO films | |
Chen et al. | Boosting the performance of ZnO microrod metal-semiconductor-metal photodetectors via surface capping of thin amorphous Al2O3 shell layer | |
Li et al. | Influence of B doping on the carrier transport mechanism and barrier height of graphene/ZnO Schottky contact | |
Zervos et al. | Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting | |
Feng et al. | Ag Interstitial Inhibition and Phonon Scattering at the ZnSe Nano-Precipitates to Enhance the Thermoelectric Performance of Ag2Se | |
Saravade et al. | Advances in growth, doping, and devices and applications of zinc oxide | |
Yang et al. | Enhancing thermoelectric performance of CuInTe2 via trace Ag doping at indium sites | |
Xu et al. | Realization of Ag-S codoped p-type ZnO thin films | |
Turgut et al. | The influence of Y contribution on crystallographic, topographic and optical properties of ZnO: A heterojunction diode application | |
Li et al. | Synthesis and field emission properties of ZnCdO hollow micro–nano spheres |