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Chang et al., 2007 - Google Patents

Low-noise and high-detectivity GaN-based UV photodiode with a semi-insulating Mg-doped GaN cap layer

Chang et al., 2007

Document ID
7092453678531593181
Author
Chang P
Yu C
Chang S
Lin Y
Liu C
Wu S
Publication year
Publication venue
IEEE Sensors Journal

External Links

Snippet

GaN-based ultraviolet photodiodes with a semi-insulating Mg-doped GaN cap layer were fabricated and characterized. Dark leakage current of the aforementioned photodiodes was much smaller than that of the conventional ones without the Mg-doped GaN cap layer due to …
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    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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