Chowdhury et al., 2023 - Google Patents
TCAD simulation of emerging nanoscale devicesChowdhury et al., 2023
- Document ID
- 7099334869506338379
- Author
- Chowdhury J
- Das J
- Sarkar A
- Mohapatra K
- Publication year
- Publication venue
- Nanoelectronics: Physics, Materials and Devices
External Links
Snippet
The modern technology computer-aided design (TCAD) for semiconductor devices enables designers to design and simulate semiconductor devices based on present technology node as per International Technology Roadmap for Semiconductors. This chapter covers brief …
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/50—Computer-aided design
- G06F17/5068—Physical circuit design, e.g. layout for integrated circuits or printed circuit boards
- G06F17/5081—Layout analysis, e.g. layout verification, design rule check
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/50—Computer-aided design
- G06F17/5009—Computer-aided design using simulation
- G06F17/5036—Computer-aided design using simulation for analog modelling, e.g. for circuits, spice programme, direct methods, relaxation methods
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/50—Computer-aided design
- G06F17/5045—Circuit design
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/20—Handling natural language data
- G06F17/21—Text processing
- G06F17/24—Editing, e.g. insert/delete
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/20—Handling natural language data
- G06F17/21—Text processing
- G06F17/22—Manipulating or registering by use of codes, e.g. in sequence of text characters
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/30—Information retrieval; Database structures therefor; File system structures therefor
- G06F17/30861—Retrieval from the Internet, e.g. browsers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/30—Information retrieval; Database structures therefor; File system structures therefor
- G06F17/30286—Information retrieval; Database structures therefor; File system structures therefor in structured data stores
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F2217/00—Indexing scheme relating to computer aided design [CAD]
- G06F2217/78—Power analysis and optimization
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Vasileska et al. | Computational electronics | |
Wu et al. | 3D TCAD simulation for CMOS nanoeletronic devices | |
US7263477B2 (en) | Method and apparatus for modeling devices having different geometries | |
Marani et al. | A simulation study of analogue and logic circuits with CNTFETs | |
Cheng et al. | A physical and scalable IV model in BSIM3v3 for analog/digital circuit simulation | |
Wu et al. | Introduction of synopsys sentaurus TCAD simulation | |
Li et al. | 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics | |
Selberherr et al. | Simulation of Semiconductor Devices and Processes: Vol. 5 | |
Liu et al. | BSIM4 and MOSFET modeling for IC simulation | |
Maiti | Computer aided design of micro-and nanoelectronic devices | |
US20080216041A1 (en) | Integrated circuit simulation method considering stress effects | |
DE112010006043T5 (en) | Apparatus and method for optimized power cell synthesizers | |
Armstrong et al. | Technology computer aided design for Si, SiGe and GaAs integrated circuits | |
Sarkar | Device simulation using Silvaco ATLAS tool | |
US10776560B2 (en) | Mapping intermediate material properties to target properties to screen materials | |
US20150088803A1 (en) | Characterizing target material properties based on properties of similar materials | |
Chowdhury et al. | TCAD simulation of emerging nanoscale devices | |
Marani et al. | Simulation of A/D Circuits Based on CNTFETs both in SPICE and Verilog-A | |
US10769339B1 (en) | Local band-to-band-tunneling model for TCAD simulation | |
US10706209B2 (en) | Estimation of effective channel length for FinFETs and nano-wires | |
US20070021953A1 (en) | Device simulation apparatus, device simulation method, and device simulation program | |
Mattausch et al. | HiSIM2 Circuit simulation-Solving the speed versus accuracy crisis | |
US20240184964A1 (en) | Parameter calibration for simulation of a transistor design | |
Chaganty | Installation and development of VLSI nanotechnology computer simulation capability | |
Ferron et al. | Schroedinger approach and density gradient model for quantum effects modeling |