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Bandara et al., 2011 - Google Patents

Doping dependence of minority carrier lifetime in long-wave Sb-based type II superlattice infrared detector materials

Bandara et al., 2011

Document ID
7015457275056148083
Author
Bandara S
Maloney P
Baril N
Pellegrino J
Tidrow M
Publication year
Publication venue
Optical Engineering

External Links

Snippet

Theoretical modeling and experimental evidence show that the dark currents of antimonide (Sb)-based Type-II Superlattice (T2SL) detectors sensitive to long-wavelength infrared (LWIR) radiation are limited by the minority carrier lifetimes associated with the Shockley …
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    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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