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Jung et al., 2011 - Google Patents

Direct photopatternable organic–inorganic hybrid gate dielectric for solution-processed flexible ZnO thin film transistors

Jung et al., 2011

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Document ID
6982849939340812716
Author
Jung Y
Jun T
Kim A
Song K
Yeo T
Moon J
Publication year
Publication venue
Journal of Materials Chemistry

External Links

Snippet

A direct photopatternable organosiloxane-based organic–inorganic hybrid gate dielectric was synthesized. The sol–gel derived hybrid dielectric could be cured at a temperature sufficiently low enough to apply to temperature-sensitive polymeric substrates, whilst …
Continue reading at nfml.yonsei.ac.kr (PDF) (other versions)

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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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