[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Weng et al., 2022 - Google Patents

Cu vacancy engineering of cage-compound BaCu2Se2: Realization of temperature-dependent hole concentration for high average thermoelectric figure-of-merit

Weng et al., 2022

View PDF
Document ID
6838198934857719138
Author
Weng T
Li Z
Li Y
Hu Y
Guo K
Liu T
Zhang J
Lyu W
Xi L
Yang X
Jiang Y
Yang J
Zhang J
Luo J
Publication year
Publication venue
Chemical Engineering Journal

External Links

Snippet

Vacancy engineering offers an alternative route to aliovalent and interstitial doping for optimization of the carrier concentration in thermoelectric materials. For the wide-bandgap semiconductor BaCu 2 Se 2, the Cu vacancy is dynamically stable; this feature can be …
Continue reading at research.usq.edu.au (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase

Similar Documents

Publication Publication Date Title
Hong et al. Establishing the golden range of Seebeck coefficient for maximizing thermoelectric performance
Xie et al. Large thermal conductivity drops in the diamondoid lattice of CuFeS2 by discordant atom doping
Du et al. The impact of lone-pair electrons on the lattice thermal conductivity of the thermoelectric compound CuSbS 2
Ren et al. Recent advances in inorganic material thermoelectrics
Jin et al. Investigation on low-temperature thermoelectric properties of Ag2Se polycrystal fabricated by using zone-melting method
Jin et al. Super large Sn1–x Se single crystals with excellent thermoelectric performance
Huang et al. Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping
Kumar et al. Thermoelectric properties of high-entropy rare-earth cobaltates
Liang et al. Realizing a high ZT of 1.6 in n-type Mg3Sb2-based Zintl compounds through Mn and Se codoping
Nolas et al. Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M= Zn, Cd)
Ma et al. Enhancement of thermoelectric properties in Pd–In Co-doped SnTe and its phase transition behavior
Adam et al. Effects of transition metal element doping on the structural and thermoelectric properties of n-type Bi2-xAgxSe3 alloys
Jood et al. Temperature-dependent structural variation and Cu substitution in thermoelectric silver selenide
Yang et al. Realizing high thermoelectric performance in BaCu2–x Ag x Te2 through enhanced carrier effective mass and point-defect scattering
Liu et al. BiCuSeO as state-of-the-art thermoelectric materials for energy conversion: from thin films to bulks
Zhang et al. Enhanced thermoelectric performance of ternary compound Cu 3 PSe 4 by defect engineering
Shi et al. Improved thermoelectric properties of BiSbTe-AgBiSe2 alloys by suppressing bipolar excitation
Cheng et al. Bridging the miscibility gap towards higher thermoelectric performance of PbS
Wang et al. Crystal structure modulation of SnSe thermoelectric material by AgBiSe2 solid solution
Weng et al. Cu vacancy engineering of cage-compound BaCu2Se2: Realization of temperature-dependent hole concentration for high average thermoelectric figure-of-merit
Yang et al. Enhancing thermoelectric performance of CuInTe2 via trace Ag doping at indium sites
Huo et al. Improvement of anisotropic thermoelectric performance in polycrystalline SnSe by metallic AgSnSe2 compositing
Isotta et al. Effect of Sn oxides on the thermal conductivity of polycrystalline SnSe
Mukherjee et al. Thermoelectric performance in disordered Cu2ZnSnSe4 nanostructures driven by ultra-low thermal conductivity
Kang et al. High pressure synthesis and thermoelectric properties of Ba-filled CoSb 3 skutterudites