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Shah et al., 1990 - Google Patents

DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique

Shah et al., 1990

Document ID
6651004530354514994
Author
Shah D
Chan W
Gmitter T
Florez L
Schumacher H
Van Der Gaag B
Publication year
Publication venue
Electronics Letters

External Links

Snippet

GaAs MESFETs have been fabricated on a silicon substrate using a molecular beam epitaxy grown film detached from its growth substrate and attached on a silicon substrate covered with a dielectric. The device processing is done on the silicon substrate. The MESFETs …
Continue reading at digital-library.theiet.org (other versions)

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