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Aubuchon, 1971 - Google Patents

Radiation hardening of p-MOS devices by optimization of the thermal si02 gate insulator

Aubuchon, 1971

Document ID
6577930038645593047
Author
Aubuchon K
Publication year
Publication venue
IEEE Transactions on Nuclear Science

External Links

Snippet

It has been found for p-channel MOS devices that considerably better radiation tolerance than generally believed possible can be obtained with gate insulators of thermally grown SiO2, provided that the processing conditions are optimized for radiation resistance. The …
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