Peng et al., 2019 - Google Patents
A ${K} $-Band High-Gain and Low-Noise Folded CMOS Mixer Using Current-Reuse and Cross-Coupled TechniquesPeng et al., 2019
View PDF- Document ID
- 6494328660095140665
- Author
- Peng Y
- He J
- Hou H
- Wang H
- Chang S
- Huang Q
- Zhu Y
- Publication year
- Publication venue
- IEEE Access
External Links
Snippet
A high-gain and low-noise folded down-conversion mixer for K-band applications is presented in this paper. Benefited from the folded double-balanced architecture, the transconductance (gm) stage and the switch stage of the mixer can operate in-different bias …
- 238000000034 method 0 title abstract description 17
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1433—Balanced arrangements with transistors using bipolar transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices using field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0001—Circuit elements of demodulators
- H03D2200/0033—Current mirrors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Peng et al. | A ${K} $-Band High-Gain and Low-Noise Folded CMOS Mixer Using Current-Reuse and Cross-Coupled Techniques | |
Gao et al. | Design of E-and W-band low-noise amplifiers in 22-nm CMOS FD-SOI | |
Ebrahimi et al. | A 71–86-GHz phased array transceiver using wideband injection-locked oscillator phase shifters | |
Chen et al. | A wideband CMOS LNA using transformer-based input matching and pole-tuning technique | |
Hu et al. | Analysis and design of a broadband receiver front end for 0.1-to-40-GHz application | |
Le et al. | A CMOS 77-GHz receiver front-end for automotive radar | |
Singh et al. | A millimeter-wave receiver using a wideband low-noise amplifier with one-port coupled resonator loads | |
Park et al. | High-linearity CMOS T/R switch design above 20 GHz using asymmetrical topology and AC-floating bias | |
Park et al. | A D-band low-power and high-efficiency frequency multiply-by-9 FMCW radar transmitter in 28-nm CMOS | |
Zhang et al. | A Ka-band CMOS phase-invariant and ultralow gain error variable gain amplifier with active cross-coupling neutralization and asymmetric capacitor techniques | |
Kashani et al. | A 53–67 GHz low-noise mixer-first receiver front-end in 65-nm CMOS | |
Tan et al. | A 0.35-V 520-$\mu\text {W} $2.4-GHz current-bleeding mixer with inductive-gate and forward-body bias, achieving> 13-dB conversion gain and> 55-dB port-to-port isolation | |
Li et al. | A flip-chip-assembled W-band receiver in 90-nm CMOS and IPD technologies | |
Lee et al. | 24–40 GHz mmWave down-conversion mixer with broadband capacitor-tuned coupled resonators for 5G new radio cellular applications | |
Zhang et al. | A precision wideband quadrature generation technique with feedback control for millimeter-wave communication systems | |
Lee et al. | 28-GHz CMOS up-conversion mixer with improved LO second-harmonic leakage signal suppression for 5G applications | |
US8212603B2 (en) | Mixer circuit | |
Kashani et al. | A 60-GHz CMOS down-conversion mixer with high conversion gain and low noise figure | |
Rajashekharaiah et al. | A new gain controllable on-chip active balun for 5 GHz direct conversion receiver | |
Jang et al. | A CMOS complementary common gate capacitive cross-coupled frequency doubler | |
Testa et al. | A complementary ring mixer driven by a single-ended LO in 22-nm FD-SOI CMOS for K and Ka-bands | |
Lammert et al. | Design and measurements of a 28 GHz High-Linearity LNA in 45nm SOI-CMOS | |
Khan et al. | A Low leakage down-conversion K-Band MIXER using current-reuse double-balanced architecture in 130-nm CMOS process for modern RF applications | |
Simitsakis et al. | Design of a low voltage-low power 3.1–10.6 GHz UWB RF front-end in a CMOS 65 nm technology | |
Murad et al. | Ultra-low power 0.45 mW 2.4 GHz CMOS low noise amplifier for wireless sensor networks using 0.13- m technology |