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Liang et al., 2023 - Google Patents

Electrical characteristics of ultrathin InZnO thin-film transistors prepared by atomic layer deposition

Liang et al., 2023

Document ID
6469659153960487018
Author
Liang Y
Lin J
Peng L
Hua Y
Chou T
Kei C
Lu C
Huang H
Yeong S
Lin Y
Liu P
Chang E
Lin C
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin (≈ 3 nm) amorphous indium–zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked with …
Continue reading at ieeexplore.ieee.org (other versions)

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