[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Pan et al., 2018 - Google Patents

A 69.5-79 GHz Low Noise Amplifier in 65-nm CMOS employing transformer feedback technique

Pan et al., 2018

Document ID
6440618749827345925
Author
Pan D
Duan Z
Wu B
et al.
Publication year
Publication venue
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

External Links

Snippet

A three stage single-ended low noise amplifier (LNA) in 65-nm COMS process is presented. The transformer (TF) feedback technique is adopted in the first common source (CS) stage of the LNA for noise and input impendence match, while allowing a more compact design. The …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191Tuned amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605Distributed amplifiers
    • H03F3/607Distributed amplifiers using FET's
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • H03F3/45188Non-folded cascode stages
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • H03F1/565Modifications of input or output impedances, not otherwise provided for using inductive elements
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2176Class E amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34Negative-feedback-circuit arrangements with or without positive feedback
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/02Coupling devices of the waveguide type with invariable factor of coupling
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices

Similar Documents

Publication Publication Date Title
Yu et al. A 54.4–90 GHz low-noise amplifier in 65-nm CMOS
Feng et al. Pole-converging intrastage bandwidth extension technique for wideband amplifiers
Oh et al. A 77-GHz CMOS power amplifier with a parallel power combiner based on transmission-line transformer
Chowdhury et al. Design considerations for 60 GHz transformer-coupled CMOS power amplifiers
Guan et al. Low-power-consumption and high-gain CMOS distributed amplifiers using cascade of inductively coupled common-source gain cells for UWB systems
Khanpour et al. A wideband W-band receiver front-end in 65-nm CMOS
Van Thienen et al. A 160-GHz three-stage fully-differential amplifier in 40-nm CMOS
Gao et al. A 4.7 mW W-Band LNA with 4.2 dB NF and 12 dB gain using drain to gate feedback in 45nm CMOS RFSOI technology
Yu et al. A 28-GHz CMOS broadband single-path power amplifier with 17.4-dBm P1dB for 5G phased-array
Zhao et al. A K-/Ka-band broadband low-noise amplifier based on the multiple resonant frequency technique
Nocera et al. Down-converter solutions for 77-GHz automotive radar sensors in 28-nm FD-SOI CMOS technology
Xu et al. A 3.4 dB NF k-band LNA in 65nm CMOS technology
Pan et al. A 69.5-79 GHz Low Noise Amplifier in 65-nm CMOS employing transformer feedback technique
Liu et al. A K-band low noise amplifier with on-chip baluns in 90nm CMOS
Chen et al. A wideband high efficiency V-band 65 nm CMOS power amplifier with neutralization and harmonic controlling
Engelmann et al. Design of two Low DC-Power High-Efficiency D-Band Power Amplifiers in 22 nm FDSOI
Duong et al. Design of a high gain power amplifier for 77 GHz radar automotive applications in 65-nm CMOS
Ibrahim et al. Design of Microwave LNA Based on Ladder Matching Networks for WiMAX Applications
Ko et al. A 8-mW 77-GHz band CMOS LNA by using reduced simultaneous noise and impedance matching technique
Tran et al. Broadband W-band power amplifier using 40 nm bulk CMOS
Özbek et al. Three-path SiGe BiCMOS LNA on thinned silicon substrate for IoT applications
Liang et al. Design of Ka band Low Noise Amplifier Based on 65nm CMOS Technology
Chen et al. A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology
Pepe et al. 72 GHz CMOS LNA with transformer-based input integrated matching
Aloui et al. Optimization of 65nm CMOS passive devices to design a 16 dBm-P sat 60 GHz power amplifier