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Galopin et al., 2008 - Google Patents

Metal-assisted chemical etching of silicon: Preparation of silicon nanowire arrays

Galopin et al., 2008

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Document ID
6439354934576018168
Author
Galopin E
Lemmens K
Piret G
Coffinier Y
Szunerits S
Boukherroub R
Publication year
Publication venue
Electrochem. Soc. Meeting Abstracts

External Links

Snippet

In recent years, a great deal of effort has been made to the fabrication of one-dimensional nanostructured materials owing to their submicron ultimate feature size and dimensionally dependent physical properties for future use in nanodevices [1]. Silicon is the basic material …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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