[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Narusawa et al., 1979 - Google Patents

Simultaneous RHEED/AES study of Si film growth on Si (111) and sapphire (11̄02) surfaces

Narusawa et al., 1979

Document ID
6420690668447825861
Author
Narusawa T
Shimizu S
Komiya S
Publication year
Publication venue
Surface Science

External Links

Snippet

Epitaxial growth of Si thin films deposited on the Si (111)-7× 7 and sapphire (11̄02)-2× 1 substrate surfaces are studied by using a new combined system at substrate temperatures ranging from 30 to 1100° C. The role of simultaneous measurement of chemical composition …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides

Similar Documents

Publication Publication Date Title
Powers et al. Observation of a negative electron affinity for boron nitride
Palmberg et al. Surface dissociation of potassium chloride by low-energy electron bombardment
Van der Weide et al. Argon and hydrogen plasma interactions on diamond (111) surfaces: Electronic states and structure
Poppa et al. The surface composition of mica substrates
Maissel et al. An introduction to thin films
Hayward et al. Sputtering Yield Measurements with Low‐Energy Metal Ion Beams
Becker et al. Materials processing using radio-frequency ion-sources: Ion-beam sputter-deposition and surface treatment
Herman Surface structure determination of CeO 2 (001) by angle-resolved mass spectroscopy of recoiled ions
Huang et al. High quality CeO2 film grown on Si (111) substrate by using low energy dual ion beam deposition technology
Okada et al. A leed-aes study of thin Pd films on Si (111) and (100) substrates
Wurz et al. Surface enrichment of Li on LiF single crystal after cleaving or under electron bombardment
Schwebel et al. Growth of silicon homoepitaxial thin films by ultrahigh vacuum ion beam sputter deposition
Massies et al. Auger electron spectroscopy and electron loss spectroscopy comparative study of vacuum annealing effects on InP surface
Ploog et al. In situ characterization of MBE grown GaAs and Al x Ga 1− x As films using RHEED, SIMS, and AES techniques
Van Bommel et al. LEED, auger electron spectroscopy (AES) and photoemission studies of the adsorption of cesium on the epitaxially grown GaAs (110) surface
Narusawa et al. Simultaneous RHEED/AES study of Si film growth on Si (111) and sapphire (11̄02) surfaces
Yang et al. Carbon-induced faceting of Si (112)
Dou et al. Electron-irradiation-induced structural and compositional changes on alkali halide surfaces
Schmiedeskamp et al. Coverage dependence of the spin-resolved photoemission from epitaxially grown Ag layers on Pt (111)
Wehner et al. Substituting low‐energy (< 30 eV) ion bombardment for elevated temperature in silicon epitaxy
Betz et al. Sputtering of insulators
Taferner et al. The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED
Peacock An AES, SAM and RHEED study of InP (110) subjected to ion bombardment and annealing treatments
Gołek et al. LiF thin layers on Si (100) studied by ESD, LEED, AES, and AFM
Ferrer et al. The early stages of growth of crystalline, diamond-like films on Si (100) by pulsed laser evaporation of graphite