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Kassabov et al., 1984 - Google Patents

Carrier mobility in inversion layers and rf plasma induced radiation defects at the Si SiO2 interface

Kassabov et al., 1984

Document ID
6409746469649916079
Author
Kassabov J
Atanassova E
Goranova E
Publication year
Publication venue
Solid-state electronics

External Links

Snippet

Radiation defects in the Si SiO 2 system caused by plasma etching or oxidation (d= 35 A ̊) as well as rf O 2 plasma treatment of the thermal oxide (d= 50 A ̊ and d= 1000 A ̊) are investigated by making use of steady-state conductance measurements of inversion layers …
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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