[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Wang et al., 2014 - Google Patents

Topological Insulator Simultaneously Q-Switched Dual-Wavelength $\hbox {Nd}:\hbox {Lu} _ {2}\hbox {O} _ {3} $ Laser

Wang et al., 2014

View PDF
Document ID
6371543782155139212
Author
Wang B
Yu H
Zhang H
Zhao C
Wen S
Zhang H
Wang J
Publication year
Publication venue
IEEE Photonics Journal

External Links

Snippet

We demonstrated the dual-wavelength simultaneously Q-switched Nd: Lu 2 O 3 laser with a topological insulator Bi 2 Se 3 as the Q-switcher. The continuous-wave Nd: Lu 2 O 3 crystal laser with the slope efficiency of 31% was achieved, and the first Nd: Lu 2 O 3 pulsed laser …
Continue reading at ieeexplore.ieee.org (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/14Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/1601Solid materials characterised by an active (lasing) ion
    • H01S3/1603Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1618Solid materials characterised by an active (lasing) ion rare earth ytterbium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/14Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/1601Solid materials characterised by an active (lasing) ion
    • H01S3/1603Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1616Solid materials characterised by an active (lasing) ion rare earth thulium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
    • H01S3/1063Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a solid state device provided with at least one potential jump barrier
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11Pulse generation, e.g. Q-switching, mode locking
    • H01S3/1106Mode locking
    • H01S3/1112Passive mode locking
    • H01S3/1115Passive mode locking using a saturable absorber
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/05Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/0619Coatings, e.g. AR, HR, passivation layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/14Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/163Solid materials characterised by a crystal matrix
    • H01S3/164Solid materials characterised by a crystal matrix garnet
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
    • H01S3/108Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
    • H01S3/109Frequency multiplying, e.g. harmonic generation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/05Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/0602Crystal lasers or glass lasers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/05Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/07Construction or shape of active medium consisting of a plurality of parts, e.g. segments
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/05Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10084Frequency control by seeding
    • H01S3/10092Coherent seed, e.g. injection locking
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/05Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/23Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/30Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves using scattering effects, e.g. stimulated Brillouin or Raman effects
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/005Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0092Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity

Similar Documents

Publication Publication Date Title
Wang et al. Topological Insulator Simultaneously Q-Switched Dual-Wavelength $\hbox {Nd}:\hbox {Lu} _ {2}\hbox {O} _ {3} $ Laser
Tang et al. 2.8-$\mu\text {m} $ Pulsed Er 3+: ZBLAN Fiber Laser Modulated by Topological Insulator
Lin et al. High-pulse-energy topological insulator Bi 2 Te 3-based passive Q-switched solid-state laser
Tang et al. High power Ho: YAP laser with 107 W of output power at 2117 nm
Song et al. Passively Q-switched mode-locked dual-wavelength Nd: GYSGG laser using graphene oxide saturable absorber
Gao et al. Self-Q-switching and passively Q-switched mode-locking of dual-wavelength Nd: YSAG laser
Qin et al. Diode-Pumped Passively Mode-Locked Tm: $\hbox {CaGdAlO} _ {4} $ Laser at 2-$\mu\hbox {m} $ Wavelength
Feng et al. Efficient CW Dual-Wavelength and Passively $ Q $-Switched Tm: LuAG Lasers
Liu et al. Compact and flexible dual-wavelength laser generation in coaxial diode-end-pumped configuration
Qin et al. Femtosecond and dual-wavelength picosecond operations of Nd, La: SrF2 disordered crystal laser
Zhang et al. Temperature tunable lasers with disordered Nd: ABC3O7 crystals
Chen et al. 935 nm-diode-pumped passively Q-switched Er: Yb: Sr3Gd2 (BO3) 4 pulse laser at 1.5–1.6 μm
Pan et al. 251 fs pulse generation with a Nd 3+-doped Ca 3 Gd 2 (BO 3) 4 disordered crystal
Liu et al. High-repetition-rate passively Q-switched Nd: GdTaO4 1066 nm laser under 879 nm pumping
Liu et al. Spectroscopic and lasing properties of a mixed (Yb, Y, Lu, Gd) calcium oxyborate crystal: Yb0. 19Y0. 34Lu0. 12Gd0. 35Ca4O (BO3) 3
Jia et al. Continuous-wave and passively Q-switched laser of Nd: LGGG crystal at 0.93 μm
Zhang et al. Efficient graphene Q-switching of an in-band pumped polycrystalline Er: YAG ceramic laser at 1617 nm
Chu et al. Experimental and theoretical study of passively Q-switched Yb: YAG laser with GaAs saturable absorber near 1050 nm
Shen et al. Continuous-wave mode-locked Tm: YAG laser with GaAs-based SESAM
Sun et al. Dual-wavelength synchronously mode-locked Nd: LaGGG laser operating at 1.3 μm with a SESAM
Cong et al. LD pumped Nd: Lu2SiO5 passively mode-locked laser with a SESAM
Lin et al. Compact diode-pumped continuous-wave and passively Q-switched Nd: GYSO laser at 1.07 µm
Wang et al. Anisotropic laser properties of Yb: Ca3La2 (BO3) 4 disordered crystal
Chen et al. Frequency expansion of efficient passively Q-switched orthogonally-polarized dual-wavelength laser
Xu et al. Generation of 3.3-ps Pulses at 1.34$\mu {\rm m} $ from High-Power Passively Mode-Locked ${\rm Nd}{:}{\rm GdVO} _ {4} $ Laser