Wang et al., 2014 - Google Patents
Topological Insulator Simultaneously Q-Switched Dual-Wavelength $\hbox {Nd}:\hbox {Lu} _ {2}\hbox {O} _ {3} $ LaserWang et al., 2014
View PDF- Document ID
- 6371543782155139212
- Author
- Wang B
- Yu H
- Zhang H
- Zhao C
- Wen S
- Zhang H
- Wang J
- Publication year
- Publication venue
- IEEE Photonics Journal
External Links
Snippet
We demonstrated the dual-wavelength simultaneously Q-switched Nd: Lu 2 O 3 laser with a topological insulator Bi 2 Se 3 as the Q-switcher. The continuous-wave Nd: Lu 2 O 3 crystal laser with the slope efficiency of 31% was achieved, and the first Nd: Lu 2 O 3 pulsed laser …
- 239000012212 insulator 0 title abstract description 22
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/14—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/14—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1616—Solid materials characterised by an active (lasing) ion rare earth thulium
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
- H01S3/1063—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a solid state device provided with at least one potential jump barrier
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Pulse generation, e.g. Q-switching, mode locking
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using a saturable absorber
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/14—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
- H01S3/109—Frequency multiplying, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10084—Frequency control by seeding
- H01S3/10092—Coherent seed, e.g. injection locking
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/30—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves using scattering effects, e.g. stimulated Brillouin or Raman effects
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Wang et al. | Topological Insulator Simultaneously Q-Switched Dual-Wavelength $\hbox {Nd}:\hbox {Lu} _ {2}\hbox {O} _ {3} $ Laser | |
Tang et al. | 2.8-$\mu\text {m} $ Pulsed Er 3+: ZBLAN Fiber Laser Modulated by Topological Insulator | |
Lin et al. | High-pulse-energy topological insulator Bi 2 Te 3-based passive Q-switched solid-state laser | |
Tang et al. | High power Ho: YAP laser with 107 W of output power at 2117 nm | |
Song et al. | Passively Q-switched mode-locked dual-wavelength Nd: GYSGG laser using graphene oxide saturable absorber | |
Gao et al. | Self-Q-switching and passively Q-switched mode-locking of dual-wavelength Nd: YSAG laser | |
Qin et al. | Diode-Pumped Passively Mode-Locked Tm: $\hbox {CaGdAlO} _ {4} $ Laser at 2-$\mu\hbox {m} $ Wavelength | |
Feng et al. | Efficient CW Dual-Wavelength and Passively $ Q $-Switched Tm: LuAG Lasers | |
Liu et al. | Compact and flexible dual-wavelength laser generation in coaxial diode-end-pumped configuration | |
Qin et al. | Femtosecond and dual-wavelength picosecond operations of Nd, La: SrF2 disordered crystal laser | |
Zhang et al. | Temperature tunable lasers with disordered Nd: ABC3O7 crystals | |
Chen et al. | 935 nm-diode-pumped passively Q-switched Er: Yb: Sr3Gd2 (BO3) 4 pulse laser at 1.5–1.6 μm | |
Pan et al. | 251 fs pulse generation with a Nd 3+-doped Ca 3 Gd 2 (BO 3) 4 disordered crystal | |
Liu et al. | High-repetition-rate passively Q-switched Nd: GdTaO4 1066 nm laser under 879 nm pumping | |
Liu et al. | Spectroscopic and lasing properties of a mixed (Yb, Y, Lu, Gd) calcium oxyborate crystal: Yb0. 19Y0. 34Lu0. 12Gd0. 35Ca4O (BO3) 3 | |
Jia et al. | Continuous-wave and passively Q-switched laser of Nd: LGGG crystal at 0.93 μm | |
Zhang et al. | Efficient graphene Q-switching of an in-band pumped polycrystalline Er: YAG ceramic laser at 1617 nm | |
Chu et al. | Experimental and theoretical study of passively Q-switched Yb: YAG laser with GaAs saturable absorber near 1050 nm | |
Shen et al. | Continuous-wave mode-locked Tm: YAG laser with GaAs-based SESAM | |
Sun et al. | Dual-wavelength synchronously mode-locked Nd: LaGGG laser operating at 1.3 μm with a SESAM | |
Cong et al. | LD pumped Nd: Lu2SiO5 passively mode-locked laser with a SESAM | |
Lin et al. | Compact diode-pumped continuous-wave and passively Q-switched Nd: GYSO laser at 1.07 µm | |
Wang et al. | Anisotropic laser properties of Yb: Ca3La2 (BO3) 4 disordered crystal | |
Chen et al. | Frequency expansion of efficient passively Q-switched orthogonally-polarized dual-wavelength laser | |
Xu et al. | Generation of 3.3-ps Pulses at 1.34$\mu {\rm m} $ from High-Power Passively Mode-Locked ${\rm Nd}{:}{\rm GdVO} _ {4} $ Laser |