Battarel et al., 1969 - Google Patents
Optimization of the planar hall effect in ferromagnetic thin films for device designBattarel et al., 1969
- Document ID
- 6225641827895329847
- Author
- Battarel C
- Galinier M
- Publication year
- Publication venue
- IEEE Transactions on Magnetics
External Links
Snippet
The planar Hall effect, although directly related to the magnetoresistance effect, differs in its potential uses by the disposition of the sensing electrodes allowing an internal balance of the excitation voltage drop. An experimental study of ferromagnetic thin film conditions of …
- 230000005355 Hall effect 0 title abstract description 18
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Thompson et al. | Thin film magnetoresistors in memory, storage, and related applications | |
| Prinz | Magnetoelectronics applications | |
| Gider et al. | The magnetic stability of spin-dependent tunneling devices | |
| Fiory et al. | Penetration depths of high T c films measured by two‐coil mutual inductances | |
| EP0896734B1 (en) | All-metal, giant magnetoresistive, solid-state component | |
| US6205008B1 (en) | Magnetic-resistance device, and magnetic head employing such a device | |
| US7209381B2 (en) | Digital processing device with disparate magnetoelectronic gates | |
| US4686472A (en) | Magnetic sensor having closely spaced and electrically parallel magnetoresistive layers of different widths | |
| US6538919B1 (en) | Magnetic tunnel junctions using ferrimagnetic materials | |
| EP1151482B1 (en) | Spin dependent tunneling sensor | |
| US7064937B2 (en) | System and method for fixing a direction of magnetization of pinned layers in a magnetic field sensor | |
| CN112313746B (en) | Magnetic josephson junction driven flux-biased superconductor memory cells and methods | |
| WO1997041601A9 (en) | All-metal, giant magnetoresistive, solid-state component | |
| US11557719B2 (en) | Magnetoresistance effect element, circuit device, and circuit unit | |
| Tkach et al. | Electric field modification of magnetotransport in Ni thin films on (011) PMN-PT piezosubstrates | |
| Zhang et al. | Extraordinary hall balance | |
| JP2004527910A (en) | Transpinner type switch and application examples | |
| Yamaguchi et al. | Temperature estimation in a ferromagnetic Fe–Ni nanowire involving a current-driven domain wall motion | |
| Battarel et al. | Optimization of the planar hall effect in ferromagnetic thin films for device design | |
| Pohm et al. | Magnetic film memories, a survey | |
| Bruyere et al. | A coupling phenomenon between the magnetization of two ferromagnetic thin films separated by a thin metallic film--Application to magnetic memories | |
| US3382448A (en) | Magnetoresistive amplifier | |
| Wang et al. | A giant magnetoimpedance effect based nonvolatile Boolean logic gate | |
| Eijkel et al. | Optimization of the response of magnetoresistive elements | |
| Mattheis et al. | Giant magnetoresistance-stack optimization for current sensor application with low hysteresis and a temperature-independent sensitivity at low current |