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Fares et al., 2018 - Google Patents

Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors

Fares et al., 2018

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Document ID
6128323194314418049
Author
Fares C
Ren F
Pearton S
Yang G
Kim J
Lo C
Wayne Johnson J
Publication year
Publication venue
Journal of Vacuum Science & Technology B

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The effects of 18 MeV alpha particle irradiation dose on the electrical properties of SiN x/AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs) using in situ grown silicon nitride as the gate dielectric were investigated. The MISHEMT …
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