[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Swertfeger et al., 2017 - Google Patents

Direct observation of the 2D gain profile in high power tapered semiconductor optical amplifiers

Swertfeger et al., 2017

View PDF
Document ID
6080826347809344199
Author
Swertfeger R
Beil J
Misak S
Thomas J
Campbell J
Renner D
Mashanovitch M
Leisher P
Publication year
Publication venue
International Conference on Photonics, Optics and Laser Technology

External Links

Snippet

A novel experimental approach to permit direct observation of the 2D gain profile in high power tapered semiconductor optical amplifiers and integrated MOPA devices is reported. A two-dimensional simulation of the photon, carrier, and gain distributions inside the tapered …
Continue reading at www.scitepress.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
    • H01S5/125—Distributed Bragg reflector lasers (DBR-lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation; Circuits therefor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/14—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/30—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves using scattering effects, e.g. stimulated Brillouin or Raman effects
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S2301/00—Functional characteristics

Similar Documents

Publication Publication Date Title
Xie et al. Watt-level room temperature continuous-wave operation of quantum cascade lasers with λ> 10 μm
Wenzel et al. Fundamental-lateral mode stabilized high-power ridge-waveguide lasers with a low beam divergence
Rauch et al. Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers
Xie et al. Room Temperature CW Operation of Short Wavelength Quantum Cascade Lasers Made of Strain Balanced Ga $ _ {\bm x} $ In $ _ {\bm {1-x}} $ As/Al $ _ {\bm y} $ In $ _ {\bm {1-y}} $ As Material on InP Substrates
Pietrzak et al. 1060-nm Ridge Waveguide Lasers Based on Extremely Wide Waveguides for 1.3-W Continuous-Wave Emission Into a Single Mode With FWHM Divergence Angle of $9^{\circ}\times 6^{\circ} $
Winterfeldt et al. Assessing the influence of the vertical epitaxial layer design on the lateral beam quality of high-power broad area diode lasers
Lee et al. Operation of photonic crystal membrane lasers above room temperature
Decker et al. 25-W monolithic spectrally stabilized 975-nm minibars for dense spectral beam combining
Williams et al. Design of high-brightness tapered laser arrays
Butt et al. Laser diode optical output dependence on junction temperature for high-power laser systems
Leisher et al. > 3W diffraction-limited 1550 nm diode laser amplifiers for LIDAR
Swertfeger et al. Direct observation of the 2D gain profile in high power tapered semiconductor optical amplifiers
Ogrodowski et al. Tapered amplifiers for high-power MOPA setups between 750 nm and 2000 nm
Campbell et al. 2.7 W continuous wave nearly-diffraction-limited output 1550 nm tapered laser diode amplifier
JP2002280668A (en) High power, kink-free, single mode laser diode
Davenport et al. Heterogeneous silicon/InP semiconductor optical amplifiers with high gain and high saturation power
Kallenbach et al. High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm
Schultz et al. Narrow vertical far-field 975-nm broad-area DFB lasers for wide temperature range operation
Li et al. High-brightness tapered laser diodes with photonic crystal structures
Li et al. Numerical simulation and experiment of high brightness tapered lasers
Yu et al. Spectral investigation of multimode fiber Bragg grating based external-cavity semiconductor lasers
Ryu et al. Reverse-taper mid-infrared quantum cascade lasers for coherent power scaling
Pham et al. Monolithic InP master oscillator power amplifier for free space optical transmissions at 1.5 µm
Guermache et al. Experimental demonstration of spatial hole burning reduction leading to 1480-nm pump lasers output power improvement
Yao et al. 10-W pulsed operation of substrate emitting photonic-crystal quantum cascade laser with very small divergence