[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Jimenez et al., 2019 - Google Patents

Self-biased 2.4 GHz CMOS RF-to-DC converter with 80% efficiency and− 22.04 dBm sensitivity for Wi-Fi energy harvesting

Jimenez et al., 2019

View PDF
Document ID
5993092439379221856
Author
Jimenez K
Hora J
Gerasta O
Zhu X
Dutkiewicz E
Publication year
Publication venue
2019 IEEE International Circuits and Systems Symposium (ICSyS)

External Links

Snippet

One of the significant disadvantages of RF energy harvesting is having a low power density in comparison to other ambient energy sources. The rectifier is the core of an RF energy harvesting system since it converts and boosts weak RF power to usable DC power. This …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191Tuned amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2176Class E amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1425Balanced arrangements with transistors
    • H03D7/1441Balanced arrangements with transistors using field-effect transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1408Balanced arrangements with diodes
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • H03F1/565Modifications of input or output impedances, not otherwise provided for using inductive elements
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/16Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041Functional aspects of demodulators
    • H03D2200/0088Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers

Similar Documents

Publication Publication Date Title
Tsai et al. A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications
Chang et al. A Ka-band stacked power amplifier with 24.8-dBm output power and 24.3% PAE in 65-nm CMOS technology
Zijie et al. A 1-to 10-GHz RF and Wideband IF Cross-Coupled Gilbert Mixer in 0.13-$\mu\hbox {m} $ CMOS
Chou et al. A 60-GHz CMOS frequency tripler with broadband performance
Jimenez et al. Self-biased 2.4 GHz CMOS RF-to-DC converter with 80% efficiency and− 22.04 dBm sensitivity for Wi-Fi energy harvesting
Mansour et al. Compact and wide-band efficiency improved RF differential rectifier for wireless energy harvesting
Wu et al. A highly efficient 1-Watt broadband class-J SiGe power amplifier at 700MHz
Demirel et al. Millimeter-wave chip set for 77–81 GHz automotive radar application
Diangco et al. 83.17% Power Conversion Efficiency, 13.5 dB Power Dynamic Range Rectifier for RF Energy Harvesting Applications in 22nm FDSOI Technology
Chen et al. A radio-frequency cross-connected rectifier with LC source degeneration
CN110492857B (en) Radio frequency low noise amplifier integrated circuit
Pan et al. A K-band active up/down bidirectional mixer in 130-nm CMOS
Chu et al. 5.7 GHz 0.18/spl mu/m CMOS gain-controlled LNA and mixer for 802.11 a WLAN applications
Oz et al. A compact 105–130 GHz push-push doubler, with 4dBm Psat and 18% efficiency in 28nm CMOS
Moon et al. Analysis and design of power-efficient h-band cmos frequency doubler employing gain boosting and harmonic enhancing techniques
Gao et al. A 58-64 GHz transformer-based differential rectifier in 40 nm CMOS with-12 dBm sensitivity for 1 V at 64 GHz
Sapawi et al. High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application
Moon et al. A 237–263 GHz CMOS Frequency Doubler with 0.9 dBm Output Power and 2.87% Power Efficiency Based on Harmonic Matched $ G_ {\max} $-Core
Souzandeh et al. Frequency Selective CMOS RF-to-DC Rectifier for Wireless Power and RFID Applications
Aghighi et al. A Frequency Doubler With Second Harmonic Feedback for Wideband, Efficient Frequency Multiplication at Millimeter-Wave
Iotti et al. A low-power 64–84GHz frequency quadrupler based on transformer-coupled resonators for E-Band backhaul applications
Wu et al. An 11.8 mW 0.4-to-2.6 GHz Blocker-Tolerant Receiver with LO Duty-Cycle Compensation and High-Q Selectivity Achieving+ 15.4/19.2 dBm OB-IIP3 at 10/80MHz Offset
Benamor et al. A fully differential 7.2-8.5 GHz LNA for a self synchronized and duty-cycled UWB OOK receiver
Wang et al. An Ultra-wideband Doubler Chain with 43–65 dBc Fundamental Rejection in Ku/K/Ka Band
Ko et al. A 0.4-1.2 GHz Reconfigurable CMOS Power Amplifier for 802.11 ah/af Applications