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Sekiguchi et al., 2013 - Google Patents

Red-light-emitting diodes with site-selective Eu-doped GaN active layer

Sekiguchi et al., 2013

Document ID
5963549940970928586
Author
Sekiguchi H
Takagi Y
Otani T
Matsumura R
Okada H
Wakahara A
Publication year
Publication venue
Japanese Journal of Applied Physics

External Links

Snippet

Mg codoping into Eu-doped GaN (GaN: Eu) changed the dominant optical site and increased the photoluminescence (PL) intensity at room temperature (RT). From the ratio of PL integrated intensity at 25 K to that at 300 K, PL efficiency of the GaN: Eu, Mg layer was …
Continue reading at iopscience.iop.org (other versions)

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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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