Isoda et al., 2014 - Google Patents
Effects of Al/Sb double doping on the thermoelectric properties of Mg 2 Si 0.75 Sn 0.25Isoda et al., 2014
View PDF- Document ID
- 5896400431081602373
- Author
- Isoda Y
- Held M
- Tada S
- Shinohara Y
- Publication year
- Publication venue
- Journal of electronic materials
External Links
Snippet
Abstract Al/Sb double-doped Mg 2 Si 0.75 Sn 0.25 materials were prepared by liquid–solid reaction synthesis and the hot-pressing technique. The effects of Al/Sb double doping on the thermoelectric properties were investigated at temperatures between room temperature and …
- 229910019018 Mg 2 Si 0 title abstract description 36
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/12—Selection of the material for the legs of the junction
- H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
- H01L35/22—Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen or germanium or silicon, e.g. superconductors
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/12—Selection of the material for the legs of the junction
- H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
- H01L35/18—Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth, e.g. AIIIBV compounds
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/12—Selection of the material for the legs of the junction
- H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
- H01L35/16—Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/12—Selection of the material for the legs of the junction
- H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
- H01L35/20—Selection of the material for the legs of the junction using inorganic compositions comprising metals only
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
- H01L35/32—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/02—Details
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/02—Details
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Lee et al. | Enhanced thermoelectric transport properties of n-type InSe due to the emergence of the flat band by Si doping | |
You et al. | Solid-State Synthesis and Thermoelectric Properties of Al-Doped Mg 2 Si | |
Isoda et al. | Thermoelectric properties of p-type Mg 2.00 Si 0.25 Sn 0.75 with Li and Ag double doping | |
Qiu et al. | Thermoelectric properties of Te-doped ternary CuAgSe compounds | |
Samunin et al. | Thermoelectric properties of hot-pressed materials based on Mg 2 Si n Sn 1− n | |
Isoda et al. | Effects of Al/Sb double doping on the thermoelectric properties of Mg 2 Si 0.75 Sn 0.25 | |
Cai et al. | Enhanced thermoelectric performance of Na-doped PbTe synthesized under high pressure | |
Jung et al. | Thermoelectric properties of Sb-doped Mg2Si prepared by solid-state synthesis | |
Jung et al. | Synthesis and thermoelectric properties of n-Type Mg 2 Si | |
Sassi et al. | Transport properties of polycrystalline p-type SnSe | |
Søndergaard et al. | Thermoelectric properties of the entire composition range in Mg 2 Si 0.9925− x Sn x Sb 0.0075 | |
Zhang et al. | Enhanced thermoelectric properties of Ag-doped compounds CuAgxGa1− xTe2 (0⩽ x⩽ 0.05) | |
Chen et al. | Thermoelectric properties of polycrystalline palladium sulfide | |
Isoda et al. | Thermoelectric Properties of Sb-Doped Mg 2 Si Prepared Using Different Silicon Sources | |
Guo et al. | A high-efficiency GeTe-based thermoelectric module for low-grade heat recovery | |
Wang et al. | Reduction of thermal conductivity in PbTe: Tl by alloying with TlSbT e 2 | |
Lee et al. | Enhancement of thermoelectric properties of Mg 2 Si compounds with Bi doping through carrier concentration tuning | |
Tsubota et al. | Improvement of thermoelectric performance for Sb-doped SnO 2 ceramics material by addition of Cu as sintering additive | |
Park et al. | Thermoelectric properties of Ca-filled CoSb 3-based skutterudites synthesized by mechanical alloying | |
Yoon et al. | Thermoelectric properties of n-Type Bi 2 Te 3/PbSe 0.5 Te 0.5 segmented thermoelectric material | |
Usenko et al. | Thermoelectric Properties of n-Type Si 0, 8 Ge 0, 2-FeSi 2 Multiphase Nanostructures | |
Goto et al. | Electrical/thermal transport and electronic structure of the binary cobalt pnictides CoPn2 (Pn= As and Sb) | |
Isoda et al. | Thermoelectric performance of p-Type Mg2Si0. 25Sn0. 75 with Li and Ag double doping | |
An et al. | Effects of spark plasma sintering temperature on thermoelectric properties of higher manganese silicide | |
Shin et al. | Solid-State Synthesis and Thermoelectric Properties of Cr-doped MnSi 1.75− δ |