[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Roy et al., 2022 - Google Patents

Measurement of circuit parasitics of SiC MOSFET in a half-bridge configuration

Roy et al., 2022

View PDF
Document ID
5876397089110956387
Author
Roy S
Basu K
Publication year
Publication venue
IEEE Transactions on Power Electronics

External Links

Snippet

Fast switching transient of SiC mosfet reduces switching loss. However, it excites device and circuit parasitics resulting in prolonged oscillation, high device stress, spurious turn on, EMI related issues, and higher switching loss. Behavioral or analytical models are used to …
Continue reading at iisceespell.com (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuit
    • G01R31/31917—Stimuli generation or application of test patterns to the device under test [DUT]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836—Fault-finding or characterising
    • G01R31/2839—Fault-finding or characterising using signal generators, power supplies or circuit analysers
    • G01R31/2841—Signal generators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3183—Generation of test inputs, e.g. test vectors, patterns or sequence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. varying supply voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2822—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere of microwave or radiofrequency circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/28—Measuring attenuation, gain, phase shift or derived characteristics of electric four pole networks, i.e. two-port networks using network analysers Measuring transient response
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/20—Measuring earth resistance; Measuring contact resistance, e.g. of earth connections, e.g. plates
    • G01R27/205—Measuring contact resistance of connections, e.g. of earth connections
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/50—Computer-aided design
    • G06F17/5009—Computer-aided design using simulation
    • G06F17/5036—Computer-aided design using simulation for analog modelling, e.g. for circuits, spice programme, direct methods, relaxation methods

Similar Documents

Publication Publication Date Title
Roy et al. Measurement of circuit parasitics of SiC MOSFET in a half-bridge configuration
Sakairi et al. Measurement methodology for accurate modeling of SiC MOSFET switching behavior over wide voltage and current ranges
Chen et al. Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs
Teyssier et al. 40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization
Foulkes et al. Developing a standardized method for measuring and quantifying dynamic on-state resistance via a survey of low voltage GaN HEMTs
Galapon et al. Measuring dynamic on resistance in GaN transistors at MHz frequencies
Roy et al. Analytical model to study hard turn-off switching dynamics of SiC MOSFET and Schottky diode pair
Liu et al. Characterization and extraction of power loop stray inductance with SiC half-bridge power module
Christensen et al. Common mode current mitigation for medium voltage half bridge SiC modules
Zhao et al. Voltage-dependent capacitance extraction of sic power mosfet s using inductively coupled in-circuit impedance measurement technique
Fu et al. Parasitic modeling for accurate inductive switching simulation of converters using SiC devices
Roy et al. Analytical model to study turn-off soft switching dynamics of SiC MOSFET in a half-bridge configuration
Azpúrua et al. Time-and frequency-domain characterization of switching losses in GaN FETs power converters
Liu et al. Extraction of parasitic inductances of SiC MOSFET power modules based on two-port S-parameters measurement
Kovacevic-Badstuebner et al. Highly accurate virtual dynamic characterization of discrete SiC power devices
Wang et al. Parasitic inductances extraction for SiC power modules using an enhanced two-port S-parameter approach
Liu et al. Extracting parasitic inductances of IGBT power modules with two-port S-parameter measurement
Middelstaedt et al. Influence of parasitic elements on radiated emissions of a boost converter
Schmied et al. Analysis of the Zero Overvoltage Switching Phenomenon
Chen et al. System co-design of a 600V GaN FET power stage with integrated driver in a QFN system-in-package (QFN-SiP)
Koh et al. A spline large-signal FET model based on bias-dependent pulsed IV measurement
Zhao et al. Extraction of voltage-dependent capacitances of SiC device through inductive coupling method
McShane et al. RF de-embedding technique for extracting power MOSFET package parasitics
Shelton et al. Comparison of Fast Switching High Current Power Devices
DeBoi Characterization and Modeling of SiC Multi-Chip Power Modules