Mukai et al., 2003 - Google Patents
GaN-based light-emitting diodes suitable for white lightMukai et al., 2003
- Document ID
- 5742310163117107627
- Author
- Mukai T
- Yamada M
- Mitani T
- Narukawa Y
- Shioji S
- Niki I
- Sonobe S
- Izuno K
- Suenaga R
- Publication year
- Publication venue
- Light-Emitting Diodes: Research, Manufacturing, and Applications VII
External Links
Snippet
High-efficient light emitting diodes (LEDs) emitting red, amber, green, blue and ultraviolet light have been obtained through the use of an InGaN active layers. The localized energy states caused by In composition fluctuation in the InGaN active layer seem to be related to …
- 229910002601 GaN 0 title abstract description 77
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. alGaAs-laser, InP-based laser
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- H01S5/22—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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