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Yang et al., 2007 - Google Patents

Schottky-Barrier Si nanowire MOSFET: Effects of source/drain metals and gate dielectrics

Yang et al., 2007

Document ID
5740689245514030926
Author
Yang W
Whang S
Lee S
Zhu H
Gu H
Cho B
Publication year
Publication venue
MRS Online Proceedings Library (OPL)

External Links

Snippet

We fabricated and studied the performance of Schottky-Barrier Si nanowire FETs (SiNW FET) by using Vapor-liquid-solid (VLS) grown Au-catalyzed SiNWs (20 nm). These devices were formed on various gate dielectrics (HfO2 or Al2O3) with different metal Source and …
Continue reading at www.cambridge.org (other versions)

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