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Krajangsang et al., 2012 - Google Patents

Effect of p-μc-Si1− xOx: H layer on performance of hetero-junction microcrystalline silicon solar cells under light concentration

Krajangsang et al., 2012

Document ID
5747755747915773275
Author
Krajangsang T
Kasashima S
Hongsingthong A
Sichanugrist P
Konagai M
Publication year
Publication venue
Current Applied Physics

External Links

Snippet

Preparation of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si1− xOx: H) by 13.56 MHz RF-PECVD method for use as a p-layer of hetero-junction μc-Si: H solar cells is presented. We investigated effects of wide-gap p-μc-Si1− xOx: H layer on the …
Continue reading at www.sciencedirect.com (other versions)

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