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Matsumoto et al., 2018 - Google Patents

MOCVD growth of nitride semiconductors

Matsumoto et al., 2018

Document ID
567101560418148738
Author
Matsumoto K
Yano Y
Tokunaga H
Ubukata A
Piao G
Mishima A
Ikenaga T
Tomita Y
Tabuchi T
Publication year
Publication venue
Nitride Semiconductor Light-Emitting Diodes (LEDs)

External Links

Snippet

In this chapter, specific characteristics of nitride semiconductor metal organic chemical vapor deposition are described about the following topics: growth mechanisms, Mg doping, visible multi quantum wellMQW growth, and ultraviolet materials growth by using high flow speed …
Continue reading at www.sciencedirect.com (other versions)

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