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Chen et al., 2019 - Google Patents

A 19.9%-efficient ultrathin solar cell based on a 205-nm-thick GaAs absorber and a silver nanostructured back mirror

Chen et al., 2019

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Document ID
5641217875789081467
Author
Chen H
Cattoni A
De Lépinau R
Walker A
Höhn O
Lackner D
Siefer G
Faustini M
Vandamme N
Goffard J
Behaghel B
Dupuis C
Bardou N
Dimroth F
Collin S
Publication year
Publication venue
Nature Energy

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Snippet

Conventional photovoltaic devices are currently made from relatively thick semiconductor layers,~ 150 µm for silicon and 2–4 µm for Cu (In, Ga)(S, Se) 2, CdTe or III–V direct bandgap semiconductors. Ultrathin solar cells using 10 times thinner absorbers could lead to …
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/549—Material technologies organic PV cells
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/52—PV systems with concentrators
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/54—Material technologies
    • Y02E10/543—Solar cells from Group II-VI materials
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    • H01L31/0232—Optical elements or arrangements associated with the device
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