Stepanov et al., 2005 - Google Patents
Fabrication of metal nanoparticles in sapphire by low-energy ion implantationStepanov et al., 2005
View PDF- Document ID
- 5581560908742177775
- Author
- Stepanov A
- Khaibullin I
- Publication year
- Publication venue
- Rev. Adv. Mater. Sci
External Links
Snippet
The present review concentrates on the fabrication of metal nanoparticles in sapphire matrix by ion implantation and their modification by laser annealing. This approach is promising for the development of optical composite materials in the optoelectronics production …
- 239000002082 metal nanoparticle 0 title abstract description 62
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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