[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Maeda et al., 2001 - Google Patents

Si-based print circuit board fabricated by Si deep etching and metal powder injection molding

Maeda et al., 2001

Document ID
5543684431433244414
Author
Maeda R
Murakoshi Y
Shimizu T
Li Y
Takizawa H
Publication year
Publication venue
Smart Structures and Devices

External Links

Snippet

In This report, Silicon wafer based print circuit board is presented as an example of application of this technique, where the metal was filled into ICP fabricated through holes to make electrical feed through. The target application of this work is Silicon based print circuit …
Continue reading at www.spiedigitallibrary.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices

Similar Documents

Publication Publication Date Title
KR102413942B1 (en) Deposition of passivation layer on graphene sheet
US7732240B2 (en) Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane
US7427526B2 (en) Deposited thin films and their use in separation and sacrificial layer applications
US20030224559A1 (en) Micromachined structures including glass vias with internal conductive layers anodically bonded to silicon-containing substrates
JPH0826886B2 (en) Fluid control device and manufacturing method thereof
WO2017218833A1 (en) Patterning graphene with a hard mask coating
CN106548924A (en) Method material removed from substrate using thickness measure in situ
TW200845324A (en) Electronic device packages and methods of formation
CA2406214A1 (en) Deposited thin films and their use in separation and sarcrificial layer applications
CN101638212A (en) Wafer-level vacuum encapsulation wire interconnecting structure of micro electro mechanical system and manufacturing method thereof
JP4539155B2 (en) Manufacturing method of sensor system
CN107003277B (en) The method for detecting the gas sensor device of gaseous analytes and manufacturing the device
KR100889115B1 (en) Method for forming a cavity structure on soi substrate and cavity structure formed on soi substrate
JP2022088395A (en) Pore formation in substrate
JP2011259371A (en) Manufacturing method of capacitive electromechanical transducer
JPH1154478A (en) Anodization method for silicon board and manufacture of surface acceleration sensor
Maeda et al. Si-based print circuit board fabricated by Si deep etching and metal powder injection molding
KR20100075743A (en) Etching resist
JP2009522120A (en) Fabrication of multilayer microcomponents by sacrificial thick film method
JP3162910B2 (en) Method for producing article made of silicon body
Murakoshi et al. Si-based multilayered print circuit board for MEMS packaging fabricated by Si deep etching, bonding, and metal powder injection
Murakoshi et al. Si-based multilayered print circuit board for MEMS packaging fabricated by Si deep etching, bonding, and vacuum metal casting
TW200815762A (en) Probe substrate for test and manufacturing method thereof
Wurz et al. Concept for using MID Technology for Advanced Packaging
JP6028887B2 (en) Wiring board, infrared sensor, and through electrode forming method