[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Newman et al., 2006 - Google Patents

Recent progress towards the development of ferromagnetic nitride semiconductors for spintronic applications

Newman et al., 2006

View PDF
Document ID
554717740171558931
Author
Newman N
Wu S
Liu H
Medvedeva J
Gu L
Singh R
Yu Z
Krainsky I
Krishnamurthy S
Smith D
Freeman A
Van Schilfgaarde M
Publication year
Publication venue
physica status solidi (a)

External Links

Snippet

This article describes progress towards producing prototype magnetoelectronic structures based on III–N semiconductor materials. We focus on the materials properties connected with the key physical phenomena underlying potential spintronic devices: producing …
Continue reading at onlinelibrary.wiley.com (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/0072—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures
    • H01F1/0081—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures in a non-magnetic matrix, e.g. Fe-nanowires in a nanoporous membrane
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/10—Selection of materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/06—Hall-effect devices
    • H01L43/065—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets

Similar Documents

Publication Publication Date Title
Pearton et al. Wide bandgap GaN-based semiconductors for spintronics
Hayashi et al. (GaMn) As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy
Pearton et al. Advances in wide bandgap materials for semiconductor spintronics
Reed et al. Room temperature magnetic (Ga, Mn) N: a new material for spin electronic devices
Ohno Ferromagnetic III–V heterostructures
Newman et al. Recent progress towards the development of ferromagnetic nitride semiconductors for spintronic applications
Dong et al. Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy
Medvedeva et al. Half-metallicity and efficient spin injection in AlN/GaN∶ Cr (0001) heterostructure
Kioseoglou et al. Epitaxial growth of the diluted magnetic semiconductors Cr y Ge 1− y and Cr y Mn x Ge 1− x− y
Yamada et al. Growth of ferromagnetic semiconductor:(Ga, Cr) As
Chung et al. Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices
US20110186948A1 (en) Semiconductor-Based Magnetic Material
Pearton et al. GaN and other materials for semiconductor spintronics
Huh et al. Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor:(Ga, Mn) N
Hai et al. Spin polarized tunneling in III–V-based heterostructures with a ferromagnetic MnAs thin film and GaAs: MnAs nanoclusters
Xi-Jun et al. Magnetic and transport properties of ferromagnetic semiconductor GaDyN thin film
Ploog Epitaxial ferromagnet-semiconductor heterostructures for electrical spin injection
Lee et al. Doping effect on the properties of III-V ferromagnetic semiconductor GaMnAs epilayers and their superlattices
US8310018B2 (en) Ferromagnetic semiconductor, method for the production thereof, components incorporating the same, and corresponding uses of said semiconductor
Tanaka Ferromagnet/Semiconductor Heterostructures and Nanostructures Grown by Molecular Beam Epitaxy
Zdoroveyshchev et al. CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures
Itaya et al. Novel IV-Group Based Diluted Magnetic Semiconductor: Cr x Ge 1− x
Melton et al. Room temperature GaN-based spin polarized emitters
Saravade Investigation of wide bandgap semiconductors for room temperature spintronic, and photovoltaic applications
Mofor et al. A study of ZnMnO as a material for magneto‐and spin‐electronics