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Backhaus-Ricoult et al., 1995 - Google Patents

Identification of oxidation mechanisms in silicon nitride ceramics by transmission electron microscopy studies of oxide scales

Backhaus-Ricoult et al., 1995

Document ID
5353493325759893903
Author
Backhaus-Ricoult M
Gogotsi Y
Publication year
Publication venue
Journal of materials research

External Links

Snippet

Additive-free HIPSN and Y 2 O 3+ Al 2 O 3-doped HPSN are oxidized in air in the temperature range from 1300 to 1500° C. TEM, SEM, EDS, and XRD are used to analyze the composition and microstructure of the oxide scales in order to determine the oxidation …
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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