[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Jungemann et al., 2012 - Google Patents

Hierarchical device simulation: the Monte-Carlo perspective

Jungemann et al., 2012

Document ID
5261545940697593356
Author
Jungemann C
Meinerzhagen B
Publication year

External Links

Snippet

This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte- Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in …
Continue reading at books.google.com (other versions)

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/50—Computer-aided design
    • G06F17/5009—Computer-aided design using simulation
    • G06F17/5036—Computer-aided design using simulation for analog modelling, e.g. for circuits, spice programme, direct methods, relaxation methods
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations

Similar Documents

Publication Publication Date Title
Jungemann et al. Hierarchical device simulation: the Monte-Carlo perspective
Selberherr Analysis and simulation of semiconductor devices
De Graaff et al. Compact transistor modelling for circuit design
Arora MOSFET models for VLSI circuit simulation: theory and practice
Ko et al. Prediction of process variation effect for ultrascaled GAA vertical FET devices using a machine learning approach
Jungemann et al. Efficient full-band Monte Carlo simulation of silicon devices
Xu et al. Analytical thermal model for self-heating in advanced FinFET devices with implications for design and reliability
Liu et al. A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body
Hong et al. A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion
Jeong et al. On backscattering and mobility in nanoscale silicon MOSFETs
Jungemann et al. Failure of moments-based transport models in nanoscale devices near equilibrium
Li et al. High-frequency characteristic fluctuations of nano-MOSFET circuit induced by random dopants
Bufler et al. Efficient monte carlo device modeling
Prakash et al. Impact of self-heating on negative-capacitance finfet: Device-circuit interaction
Mukhopadhyay et al. Modeling and analysis of loading effect on leakage of nanoscaled bulk-CMOS logic circuits
Wang et al. A unified nonquasi-static MOSFET model for large-signal and small-signal simulations
Hasnat et al. Thermionic emission model of electron gate current in submicron NMOSFETs
Fan et al. MC simulation of strained-Si MOSFET with full-band structure and quantum correction
He et al. A carrier-based approach for compact modeling of the long-channel undoped symmetric double-gate MOSFETs
Ravaioli Hierarchy of simulation approaches for hot carrier transport in deep submicron devices
Martinie et al. Impact of ballistic and quasi-ballistic transport on performances of double-gate MOSFET-based circuits
Jungemann et al. Analysis of the stochastic error of stationary Monte Carlo device simulations
Jungemann et al. On the accuracy and efficiency of substrate current calculations for sub-μm n-MOSFET's
Camargo et al. 3-D Monte Carlo device simulator for variability modeling of p-MOSFETs
Goldsman et al. Advances in the Spherical Harmonic–Boltzmann–Wigner approach to device simulation