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Gu et al., 2006 - Google Patents

Quantitative measurement of the electron and hole mobility− lifetime products in semiconductor nanowires

Gu et al., 2006

Document ID
5234323369334653202
Author
Gu Y
Romankiewicz J
David J
Lensch J
Lauhon L
Publication year
Publication venue
Nano Letters

External Links

Snippet

The mobility− lifetime products (μτ) for electrons and holes in CdS nanowires were quantitatively determined by scanning photocurrent microscopy of devices with ohmic contacts. Ohmic contacts were fabricated by ion bombardment of the contact regions. By …
Continue reading at pubs.acs.org (other versions)

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    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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    • H01L31/035227—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nano-rods
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    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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