Shand, 1969 - Google Patents
The preparation and growth of single crystals of some ternary sulphidesShand, 1969
- Document ID
- 5142007836931746399
- Author
- Shand W
- Publication year
- Publication venue
- Journal of Crystal Growth
External Links
Snippet
The application of the Stockbarger technique to the growth of single crystals of ternary sulphides has been investigated. Single crystals of CdIn 2 S 4, ZnIn 2 S 4 and CdGa 2 S 4 have been prepared, both from the constituent binary sulphides and the basic elements …
- 150000003568 thioethers 0 title abstract 3
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/08—Compounds containing boron and nitrogen, phosphorus, oxygen, sulfur, selenium or tellurium
- C01B35/10—Compounds containing boron and oxygen
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising material or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chevy et al. | Large InSe monocrystals grown from a non-stoichiometric melt | |
| Abrikosov | Semiconducting Ii–Vi, Iv–Vi, and V–Vi Compounds | |
| Korczak et al. | Liquid encapsulated Czochralski growth of silver thiogallate | |
| Bouchard | The preparation of single crystals of FeS2, CoS2, and NiS2 pyrites by chlorine transport | |
| Fujita et al. | Growth of cubic ZnS, ZnSe and ZnSxSe1-xsingle crystals by iodine transport | |
| Shand | The preparation and growth of single crystals of some ternary sulphides | |
| Rubenstein | Solution growth of some II–VI compounds using tin as a solvent | |
| Berkes et al. | Growth of rutile of controlled composition from borate fluxes | |
| CN108425152B (en) | Strontium metaborate birefringent crystal, preparation method and application thereof | |
| Su et al. | Growth of ZnTe by physical vapor transport and traveling heater method | |
| Xing et al. | High‐pressure vapor transport of ZnGeP2 | |
| Chedzey et al. | A study of the melt growth of single-crystal thiogallates | |
| Soxman | Hollow crystals of hexagonal ZnS | |
| Allred et al. | The preparation and properties of aluminum antimonide | |
| Hemmat et al. | Closed System Vapor Growth of Bulk CdS Crystals from the Elemental Constituents | |
| Garner et al. | Growth of cinnabar (HgS) from sodium sulfide-sulfur fluxes | |
| GB1229508A (en) | ||
| JPH0234597A (en) | Growing method for gaas single crystal by horizontal bridgman method | |
| CA1149709A (en) | Magneto-optic bi.sub.1 lu.sub.2 fe.sub.5 o in12 xx crystals | |
| JPS62176998A (en) | Gallium arsenide crystal and growth thereof | |
| Roy et al. | High temperature solution (flux) and high pressure solution (hydrothermal) crystal growth | |
| Triboulet | The growth of bulk ZnSe crystals | |
| Ohachi et al. | Growth of α-Ag2S and α-Ag2Se single crystals in a solid/vapour system | |
| JPS61215296A (en) | Production of bapbi-xbixo3 single crystal | |
| Patel et al. | Growth of barite group crystals by the flux evaporation method |