[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Savelli et al., 2015 - Google Patents

Titanium-based silicide quantum dot superlattices for thermoelectrics applications

Savelli et al., 2015

View PDF
Document ID
5086335302798377433
Author
Savelli G
Stein S
Bernard-Granger G
Faucherand P
Montès L
Dilhaire S
Pernot G
Publication year
Publication venue
Nanotechnology

External Links

Snippet

Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been …
Continue reading at hal.science (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Similar Documents

Publication Publication Date Title
Neophytou et al. Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si
Zastrow et al. Thermoelectric transport and Hall measurements of low defect Sb2Te3 thin films grown by atomic layer deposition
Noroozi et al. Unprecedented thermoelectric power factor in SiGe nanowires field-effect transistors
Yu et al. Separation of top and bottom surface conduction in Bi2Te3 thin films
WO2009052464A1 (en) Thermoelectric materials and devices
Savelli et al. Titanium-based silicide quantum dot superlattices for thermoelectrics applications
Swinkels et al. Nanowires for heat conversion
Bao et al. Electrical and thermal conductivity of Ge∕ Si quantum dot superlattices
Dimaggio et al. Potentialities of silicon nanowire forests for thermoelectric generation
Xu Thermoelectric effects and topological insulators
Zhang et al. Robust topological surface transport with weak localization bulk channels in polycrystalline Bi2Te3 films
Liu et al. Shubnikov–de Haas oscillations in n and p type Bi2Se3 flakes
Lee et al. Thermal conductivity measurements of single-crystalline bismuth nanowires by the four-point-probe 3-ω technique at low temperatures
Schäfer et al. Electrical transport properties of Ge-doped GaN nanowires
Termentzidis Thermal conductivity anisotropy in nanostructures and nanostructured materials
Lee et al. Temperature-dependent thermal conductivities of 1D semiconducting nanowires via four-point-probe 3-ω method
Mach et al. Electronic transport properties of graphene doped by gallium
Anderson et al. Low thermal budget high-k/metal surface gate for buried donor-based devices
Pichon et al. Variable range hopping conduction in N-and P-type in situ doped polycrystalline silicon nanowires
Sellai et al. Barrier height and interface characteristics of Au/Mn5Ge3/Ge (1 1 1) Schottky contacts for spin injection
Oehme et al. Two-dimensional hole gases in SiGeSn alloys
Takayanagi et al. Control of thermoelectric properties of ZnO using electric double-layer transistor structure
Barnett et al. The effects of surface stripping ZnO nanorods with argon bombardment
Zellekens et al. Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires
Kim et al. Enhanced thermoelectric efficiency in nanocrystalline bismuth telluride nanotubes