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Freller et al., 1987 - Google Patents

TixAl1− xN films deposited by ion plating with an arc evaporator

Freller et al., 1987

Document ID
5046252969643137958
Author
Freller H
Haessler H
Publication year
Publication venue
Thin Solid Films

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Snippet

Deposition experiments have been carried out to obtain Ti x Al 1− x N coatings by the ion- bonding process and by magnetron sputter ion plating (MSIP). Aluminium concentrations of between 10 and 50 at.% in the source material were used for the deposition. The …
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325Electric arc evaporation
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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