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Patil et al., 2020 - Google Patents

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu2ZnSn (S1–x Se x) 4 Thin Films

Patil et al., 2020

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Document ID
4971723991863115810
Author
Patil S
Khot K
Mali S
Hong C
Bhosale P
Publication year
Publication venue
Industrial & Engineering Chemistry Research

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Snippet

Recently, deposition of Cu2ZnSn (S1–x Se x) 4 (CZTSSe) thin films directly onto substrates via a cost-effective hydrothermal route has become a promising approach for their further development. We investigated the influence of the Se2–ion content on the growth and …
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    • HELECTRICITY
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    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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    • H01L31/0322Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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