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Bolognesi et al., 2002 - Google Patents

InP/GaAsSb/InP double heterojunction bipolar transistors

Bolognesi et al., 2002

Document ID
4956750995797994427
Author
Bolognesi C
Dvorak M
Watkins S
Publication year
Publication venue
Proceedings. IEEE Lester Eastman Conference on High Performance Devices

External Links

Snippet

InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) are some of the fastest bipolar transistors ever fabricated, with current gain cutoff and maximum oscillation frequencies simultaneously exceeding 300 GHz while maintaining breakdown voltages …
Continue reading at ieeexplore.ieee.org (other versions)

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