[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Takiguchi et al., 2023 - Google Patents

Damage protection from focused ion beam process toward nanocavity-implemented compound semiconductor nanowire lasers

Takiguchi et al., 2023

Document ID
4928823771368568531
Author
Takiguchi M
Zhang G
Sasaki S
Tateno K
John C
Ono M
Sumikura H
Shinya A
Notomi M
Publication year
Publication venue
Nanotechnology

External Links

Snippet

A focused ion beam (FIB) can precisely mill samples and freely form any nanostructure even on surfaces with curvature, like a nanowire surface, which are difficult to implement by using conventional fabrication techniques, eg electron beam lithography. Thus, this tool is …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y20/00—Nano-optics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Similar Documents

Publication Publication Date Title
Ramesh et al. Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well
Zhang et al. Advances in III‐nitride semiconductor microdisk lasers
Coulon et al. Displacement Talbot lithography for nano-engineering of III-nitride materials
Chen et al. Optically pumped ultraviolet lasing from nitride nanopillars at room temperature
Kim et al. Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms
Niu et al. Ultra-low threshold gallium nitride photonic crystal nanobeam laser
Damilano et al. Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
Crawford et al. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates
Néel et al. Aluminum nitride photonic crystals and microdiscs for ultra-violet nanophotonics
Meunier et al. Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas
Sergent et al. Subliming GaN into ordered nanowire arrays for ultraviolet and visible nanophotonics
Bürger et al. Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots
Cuesta et al. Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets
Moosburger et al. Nanofabrication of high quality photonic crystals for integrated optics circuits
Takiguchi et al. Damage protection from focused ion beam process toward nanocavity-implemented compound semiconductor nanowire lasers
Peyrade et al. Fabrication of GaN photonic crystals for 400 nm wavelength
Kim et al. Lattice constant effect of photonic crystals on the light output of blue light-emitting diodes
Dylewicz et al. Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl2/Ar/N2 chemistry
Zhang et al. Influence of strain on emission from GaN-on-Si microdisks
Tang et al. GaN-based distributed feedback laser diodes grown on Si
Rousseau III-Nitride Semiconductor Photonic Nanocavities on Silicon
Iyer et al. Unidirectional luminescence from quantum well metasurfaces
Chen et al. Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities
Verma et al. Bandstructure Engineering With a 2-D Patterned Quantum Well Superlattice
Kim et al. Enhanced photon tunneling for light enhancements from nanopatterned surfaces with subwavelength nanoholes