Kushwaha et al., 2016 - Google Patents
Sn-doped Bi1. 1Sb0. 9Te2S bulk crystal topological insulator with excellent propertiesKushwaha et al., 2016
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- 4895380894773927597
- Author
- Kushwaha S
- Pletikosić I
- Liang T
- Gyenis A
- Lapidus S
- Tian Y
- Zhao H
- Burch K
- Lin J
- Wang W
- Ji H
- Fedorov A
- Yazdani A
- Ong N
- Valla T
- Cava R
- Publication year
- Publication venue
- Nature communications
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Snippet
A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk …
- 239000012212 insulator 0 title abstract description 39
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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