[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Manoj et al., 2008 - Google Patents

Effect of oxygen intercalation on properties of sputtered CuYO 2 for potential use as p-type transparent conducting films

Manoj et al., 2008

View PDF
Document ID
4826024781581875946
Author
Manoj R
Nisha M
Vanaja K
Jayaraj M
Publication year
Publication venue
Bulletin of Materials Science

External Links

Snippet

Transparent films of copper yttrium oxide doped with 2% calcium have been prepared by rf magnetron sputtering. The films show a conductivity of 8 Scm− 1 on intercalation of oxygen at high pressure, which reduced the transparency in the visible region. The Ca-doped CuYO …
Continue reading at www.ias.ac.in (PDF) (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds

Similar Documents

Publication Publication Date Title
Goktas High-quality solution-based Co and Cu co-doped ZnO nanocrystalline thin films: Comparison of the effects of air and argon annealing environments
Studenikin et al. Fabrication of green and orange photoluminescent, undoped ZnO films using spray pyrolysis
Naghavi et al. Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target
Ni et al. Electrical, structural, photoluminescence and optical properties of p-type conducting, antimony-doped SnO2 thin films
Barnabé et al. p-Type conducting transparent characteristics of delafossite Mg-doped CuCrO 2 thin films prepared by RF-sputtering
Kaushal et al. Effect of Mg content on structural, electrical and optical properties of Zn1− xMgxO nanocomposite thin films
Singh et al. Effect of indium doping on zinc oxide films prepared by chemical spray pyrolysis technique
Manoj et al. Effect of oxygen intercalation on properties of sputtered CuYO 2 for potential use as p-type transparent conducting films
Wang et al. Wurtzite CoO: A direct band gap oxide suitable for a photovoltaic absorber
Konan et al. Influence of the precursor concentration on the morphological and structural properties of zinc oxide (ZnO)
Sun et al. Microstructures and optoelectronic properties of CuxO films deposited by high-power impulse magnetron sputtering
Xue et al. X-ray diffraction spectroscopy and X-ray photoelectron spectroscopy studies of Cu-doped ZnO films
Pang et al. Revealing an elusive metastable wurtzite CuFeS2 and the phase switching between wurtzite and chalcopyrite for thermoelectric thin films
Sun et al. Structural, optical, and electrical properties of conducting p-type transparent Cu–Cr–O thin films
Deng et al. Characterization of amorphous p-type transparent CuFeO2 thin films prepared by radio frequency magnetron sputtering method at room temperature
Tahar et al. Effect of processing parameters on physical properties of cadmium stannate thin films prepared by a dip‐coating technique
Moriga et al. Crystal Structures and Electrical and Optical Properties of MgIn2− xGaxO4Solid Solutions
Michiue et al. Electrical, optical, and thermoelectric properties of Ga 2 O 3 (ZnO) 9
Kim et al. Hybrid solution processed InGaO 3 (ZnO) m thin films with periodic layered structures and thermoelectric properties
Herissi et al. Properties of (NiO) 1-x (ZnO) x thin films deposited by spray pyrolysis
Djelloul et al. Properties of undoped and (Al, In) doped ZnO thin films prepared by ultrasonic spray pyrolysis for solar cell applications
WO2010066359A1 (en) Method for manufacturing a powder for the production of p-type transparent conductive films
Liu et al. Effect of surfactants on the structure and photoelectric properties of ITO films by sol-gel method
Islam et al. Effect of Sn doping on the properties of nano-structured ZnO thin films deposited by Co-sputtering technique
Muniswami Naidu et al. Grain boundary carrier scattering in ZnO thin films: a study by temperature-dependent charge carrier transport measurements