[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Nasr et al., 2014 - Google Patents

A 50-100-GHz Highly Integrated Octave-Bandwidth Transmitter and Receiver Chipset in ${\hbox {0.35-}}\mu {\hbox {m}} $ SiGe Technology

Nasr et al., 2014

Document ID
4645723524044309483
Author
Nasr I
Knapp H
Aufinger K
Weigel R
Kissinger D
Publication year
Publication venue
IEEE Transactions on Microwave Theory and Techniques

External Links

Snippet

This work presents a highly integrated transmitter (TX) and receiver (RX) chipset operating from 50 to 100 GHz. The local oscillator (LO) is realized using a high output power millimeter- wave integrated frequency synthesizer with an octave output frequency range. The …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1425Balanced arrangements with transistors
    • H03D7/1441Balanced arrangements with transistors using field-effect transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1425Balanced arrangements with transistors
    • H03D7/1433Balanced arrangements with transistors using bipolar transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1408Balanced arrangements with diodes
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041Functional aspects of demodulators
    • H03D2200/0088Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/16Multiple-frequency-changing
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001Circuit elements of demodulators
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06Transference of modulation using distributed inductance and capacitance
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06Receivers
    • H04B1/16Circuits
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00Details

Similar Documents

Publication Publication Date Title
Sarkas et al. A fundamental frequency 120-GHz SiGe BiCMOS distance sensor with integrated antenna
Kim et al. 300 GHz integrated heterodyne receiver and transmitter with on-chip fundamental local oscillator and mixers
Floyd et al. SiGe bipolar transceiver circuits operating at 60 GHz
Ebrahimi et al. A 71–86-GHz phased array transceiver using wideband injection-locked oscillator phase shifters
Sarmah et al. 235–275 GHz (x16) frequency multiplier chains with up to 0 dBm peak output power and low DC power consumption
Zhao et al. A 160-GHz subharmonic transmitter and receiver chipset in an SiGe HBT technology
Deng et al. A D-band joint radar-communication CMOS transceiver
Ali et al. 220–360-GHz broadband frequency multiplier chains (x8) in 130-nm BiCMOS technology
Nasr et al. A 50-100-GHz Highly Integrated Octave-Bandwidth Transmitter and Receiver Chipset in ${\hbox {0.35-}}\mu {\hbox {m}} $ SiGe Technology
Monaco et al. Injection-Locked CMOS Frequency Doublers for $\mu $-Wave and mm-Wave Applications
Levinger et al. High-performance E-band transceiver chipset for point-to-point communication in SiGe BiCMOS technology
Le et al. A CMOS 77-GHz receiver front-end for automotive radar
Nasr et al. A 70–90-GHz High-Linearity Multi-Band Quadrature Receiver in ${\hbox {0.35-}}\mu {\hbox {m}} $ SiGe Technology
Kodkani et al. A 24-GHz CMOS passive subharmonic mixer/downconverter for zero-IF applications
Nehring et al. A 4–32-GHz chipset for a highly integrated heterodyne two-port vector network analyzer
Chen et al. A K-band frequency tripler using transformer-based self-mixing topology with peaking inductor
Mazzanti et al. A 24 GHz subharmonic direct conversion receiver in 65 nm CMOS
Jang et al. 120-GHz wideband I/Q receiver based on baseband equalizing technique
Zhang et al. A 21.7-to-41.7-GHz injection-locked LO generation with a narrowband low-frequency input for multiband 5G communications
Li et al. A 220-GHz sliding-IF quadrature transmitter and receiver chipset for high data rate communication in 0.13-µm SiGe BiCMOS
Hung et al. High-isolation millimeter-wave subharmonic monolithic mixer with modified quasi-circulator
So et al. A V-band differential push–push frequency doubler with a current-reuse gm-boosted buffer
Jackson et al. A dual-band self-oscillating mixer for $ C $-band and $ X $-band applications
Zhu et al. A millimeter-wave fundamental and subharmonic hybrid CMOS mixer for dual-band applications
Del Rio et al. Multi-Gbps tri-band 28/38/60-GHz CMOS transmitter for millimeter-wave radio system-on-chip