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Agrawal et al., 2020 - Google Patents

Interfacial study of vertically aligned n-type MoS2 flakes heterojunction with p-type Cu-Zn-Sn-S for self-powered, fast and high performance broadband photodetector

Agrawal et al., 2020

Document ID
4644941481351561762
Author
Agrawal A
Kaur K
Kumar M
Publication year
Publication venue
Applied Surface Science

External Links

Snippet

The pn junction is an influential trait for efficient charge transport in electronic and optoelectronic devices. Demonstrating pn junction using 2D TMDCs is inescapable to integrate these materials with matured 3D material technology, as 2D material offers easy …
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    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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