Zhu et al., 2018 - Google Patents
Growth and transport properties of topological insulator Bi2Se3 thin film on a ferromagnetic insulating substrateZhu et al., 2018
View PDF- Document ID
- 4625092448039329179
- Author
- Zhu S
- Shi G
- Zhao P
- Meng D
- Liang G
- Zhai X
- Lu Y
- Li Y
- Chen L
- Wu K
- Publication year
- Publication venue
- Chinese Physics B
External Links
Snippet
Exchange coupling between topological insulator and ferromagnetic insulator through proximity effect is strongly attractive for both fundamental physics and technological applications. Here we report a comprehensive investigation on the growth behaviors of …
- 239000000758 substrate 0 title abstract description 62
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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